Whitman, L.
, Stroscio, J.
, Dragoset, R.
and Celotta, R.
(1991),
Geometric and Electronic Properties of Cs Structures on III-V (110) Surfaces: From 1-D and 2-D Insulators to 3-D Metals, Physical Review Letters
(Accessed April 19, 2024)
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Geometric and Electronic Properties of Cs Structures on III-V (110) Surfaces: From 1-D and 2-D Insulators to 3-D Metals
Published
Author(s)
L Whitman, , ,
Abstract
We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in a c(4 x 4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayerCitation
Physical Review Letters
Volume
66
Issue
10
Pub Type
Journals
Citation
Created December 31, 1990, Updated October 12, 2021