Bertness, K.
, Sanford, N.
and Davydov, A.
(2011),
GaN nanowires grown by molecular beam epitaxy, IEEE Journal of Selected Topics in Quantum Electronics, [online], https://doi.org/10.1109/JSTQE.2010.2082504
(Accessed October 8, 2025)
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GaN nanowires grown by molecular beam epitaxy
Published
Author(s)
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Abstract
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include defect-free growth mode with no residual strain, long photoluminescence lifetime, low surface recombination velocity and high mechanical quality factor. The high purity of the nanowires grown with this method allows for controllable n-type doping. P type doping presents more challenges but has been demonstrated in active light emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.Citation
IEEE Journal of Selected Topics in Quantum Electronics
Volume
17
Issue
4
Pub Type
Journals
Download Paper
Keywords
crystal growth, nanotechnology, photoluminescence, semiconductor materials
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Created July 1, 2011, Updated November 10, 2018