Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include defect-free growth mode with no residual strain, long photoluminescence lifetime, low surface recombination velocity and high mechanical quality factor. The high purity of the nanowires grown with this method allows for controllable n-type doping. P type doping presents more challenges but has been demonstrated in active light emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.
IEEE Journal of Selected Topics in Quantum Electronics
, Sanford, N.
and Davydov, A.
GaN nanowires grown by molecular beam epitaxy, IEEE Journal of Selected Topics in Quantum Electronics, [online], https://doi.org/10.1109/JSTQE.2010.2082504
(Accessed December 5, 2023)