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Gallium nitride nanowires achieve crystalline perfection

Published

Author(s)

Kristine A. Bertness, Norman A. Sanford, John B. Schlager

Abstract

A new method of growing a common semiconductor provides an avenue for fabricating perfect crystals in a form that takes advantage of their unique optical, electrical, and mechanical properties.
Citation
SPIE Newsroom

Keywords

GaN nanowires

Citation

Bertness, K. , Sanford, N. and Schlager, J. (2011), Gallium nitride nanowires achieve crystalline perfection, SPIE Newsroom, [online], https://doi.org/10.1117/2.1201109.003892 (Accessed April 15, 2024)
Created October 25, 2011, Updated December 19, 2019