Harnett, J.
, Tobar, M.
, Mann, A.
, Invanov, E.
, Krupka, J.
and Geyer, R.
(1999),
Frequency-Temperature Compensation in Ti<sup>3+</sup> and Ti<sup>4+</sup> Doped Sapphire Whispering Gallery Mode Resonators, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
(Accessed April 23, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Frequency-Temperature Compensation in Ti3+ and Ti4+ Doped Sapphire Whispering Gallery Mode Resonators
Published
Author(s)
J. G. Harnett, M. E. Tobar, A. G. Mann, E. N. Invanov, Jerzy Krupka,
Abstract
A new method of compensating the frequency temperature dependence of high-Q monolithic sapphire di-electric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti3+ ions. This technique offers significant advantages over other methods.Citation
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Volume
46
Issue
4
Pub Type
Journals
Keywords
doped sapphire, frequency-temperature compensation, microwave
Citation
Created June 30, 1999, Updated October 12, 2021