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Frequency-Temperature Compensation in Ti3+ and Ti4+ Doped Sapphire Whispering Gallery Mode Resonators

Published

Author(s)

J. G. Harnett, M. E. Tobar, A. G. Mann, E. N. Invanov, Jerzy Krupka, Richard G. Geyer

Abstract

A new method of compensating the frequency temperature dependence of high-Q monolithic sapphire di-electric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti3+ ions. This technique offers significant advantages over other methods.
Citation
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Volume
46
Issue
4

Keywords

doped sapphire, frequency-temperature compensation, microwave

Citation

Harnett, J. , Tobar, M. , Mann, A. , Invanov, E. , Krupka, J. and Geyer, R. (1999), Frequency-Temperature Compensation in Ti<sup>3+</sup> and Ti<sup>4+</sup> Doped Sapphire Whispering Gallery Mode Resonators, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control (Accessed June 21, 2024)

Issues

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Created June 30, 1999, Updated October 12, 2021