Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Formation and transfer of GaAsN nanostructure layers

Published

Author(s)

Christopher L. Soles, Hyun W. Ro, A. Wood, N. Estrada, B. Dick, Y. Wang, Micheal Thouless, Rachel Goldman

Abstract

Nanostructured materials with ultra-small crystallites (approaching the exciton Bohr radius) embedded in a solid-state matrix have great potential for optoelectronic and energy-conversion applications owing to the possibility of invoking quantum effects. However, the widespread application of such devices will require the integration of thin layers of the nanostructured material with alternative substrates that provide functional advantages such as increased heat dissipation or reduced material costs. Here, we report the first integration of a thin film containing embedded semiconductor nanocrystallites with various functional substrates. In particular, we achieved simultaneous nanostructuring and thin-film transfer through the bonding of nitrogen-implanted GaAs to Al2O3 and AlN substrates, followed by rapid-thermal annealing. Furthermore, we illustrate the critical role of the physical properties and thickness of the bonding layer on the morphology of the transferred layer. This process is expected to be useful for the integration of embedded semiconductor nanostructures with a wide variety of substrates.
Citation
Journal of Vacuum Science and Technology A
Volume
29
Issue
6

Keywords

thin film, layer transfer, quantum dots, galium nitride, organosilicates

Citation

Soles, C. , Ro, H. , Wood, A. , Estrada, N. , Dick, B. , Wang, Y. , Thouless, M. and Goldman, R. (2011), Formation and transfer of GaAsN nanostructure layers, Journal of Vacuum Science and Technology A, [online], https://doi.org/10.1116/1.3630120 (Accessed April 17, 2024)
Created September 27, 2011, Updated April 24, 2020