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Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors

Published

Author(s)

David L. Blackburn
Proceedings Title
Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics
Issue
6
Conference Dates
September 2-6, 1991
Conference Location
Florence, IT

Citation

Blackburn, D. (1992), Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors, Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics, Florence, IT (Accessed April 16, 2024)
Created September 1, 1992, Updated February 17, 2017