Pierce, D.
, Wang, G.
and Celotta, R.
(1979),
Face dependence of the spin polarization of photoelectrons from NEA GaAs(100) and (110), Applied Physics Letters
(Accessed April 26, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Face dependence of the spin polarization of photoelectrons from NEA GaAs(100) and (110)
Published
Author(s)
, G Wang,
Abstract
We present measurements of the spin polarization P of photoelectrons from negative electron affinity (NEA) GaAs (100) and find P=43% at a photon energy of 1.57 eV. This contrasts with a maximum P=21% measured by Erbudak and Reihl for NEA GaAs (110), which led them to conclude that NEA and high P exclude each other. This difference in P is important for sources of polarized electrons employing photoemission from GaAs. We suggest that the origin of this difference may be connected with differences in the photoelectron emission process at the two faces, as calculated by Burt and Inkson.Citation
Applied Physics Letters
Volume
35
Issue
3
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created July 31, 1979, Updated October 12, 2021