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External Quantum Efficeincy of Pt/n-GaN Schottky Diodes in the Spectral Range 5-500 nm

Published

Author(s)

A Shahid, Robert E. Vest, D Franz, F Yan, Y Zhao, Brent Mott
Citation
Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment
Volume
ume 539

Keywords

GaN, leakage current, Quantum efficiency, radiation hardness, Schottky photodiode, spatial uniformity

Citation

Shahid, A. , Vest, R. , Franz, D. , Yan, F. , Zhao, Y. and Mott, B. (2005), External Quantum Efficeincy of Pt/n-GaN Schottky Diodes in the Spectral Range 5-500 nm, Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment (Accessed May 21, 2024)

Issues

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Created February 20, 2005, Updated October 12, 2021