Shahid, A.
, Vest, R.
, Franz, D.
, Yan, F.
, Zhao, Y.
and Mott, B.
(2005),
External Quantum Efficeincy of Pt/n-GaN Schottky Diodes in the Spectral Range 5-500 nm, Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment
(Accessed September 19, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
External Quantum Efficeincy of Pt/n-GaN Schottky Diodes in the Spectral Range 5-500 nm
Published
Author(s)
A Shahid, , D Franz, F Yan, Y Zhao, Brent Mott
Citation
Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment
Volume
ume 539
Pub Type
Journals
Keywords
GaN, leakage current, Quantum efficiency, radiation hardness, Schottky photodiode, spatial uniformity
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created February 20, 2005, Updated October 12, 2021