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Exposure Dose Effects on the Reaction-Diffusion Process in Model extreme ultraviolet Photoresists

Published

Author(s)

Kristopher Lavery, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Kwang-Woo Choi

Abstract

The effect of exposure dose on the latent image deprotection profile in a model extreme ultraviolet (EUV) photoresist polymer, poly(hydroxystyrene-co-d9-tert-butyl acrylate), is measured with neutron reflectometry. As the photoacid concentration is increased by exposure dose, the spatial extent of propagation increases but eventually becomes self-limited by the products of the reaction. A long-range deprotection path occurs with diffusion length between 10 and 100 Å, while an additional subnanometer short-range deprotection length scale proceeds monotonically with dose. These measurements show that the photoacid diffusion length into unexposed regions of a photoresist is limited even in the absence of base quencher additives. These fundamental data can be used to highlight materials effects on photoresist processing and to improve quantitative models for EUV photoresists needed at the sub-32-nm half pitch lithography.
Citation
Journal of Vacuum Science and Technology B
Volume
24
Issue
6

Keywords

chemically amplified photoresist, diffusion, neutron reflectivity, photolithography

Citation

Lavery, K. , Vogt, B. , Prabhu, V. , Lin, E. , Wu, W. and Choi, K. (2006), Exposure Dose Effects on the Reaction-Diffusion Process in Model extreme ultraviolet Photoresists, Journal of Vacuum Science and Technology B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852653 (Accessed June 18, 2024)

Issues

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Created November 29, 2006, Updated October 12, 2021