Witczak, S.
, Suehle, J.
and Gaitan, M.
(1992),
An Experimental Comparison of Measurement Techniques to Extract Si-SiO<sub>2</sub> Interface Trap Density, Solid-State Electronics
(Accessed March 25, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
An Experimental Comparison of Measurement Techniques to Extract Si-SiO2 Interface Trap Density
Published
Author(s)
S C. Witczak, ,
Citation
Solid-State Electronics
Volume
35
Issue
3
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1992, Updated October 12, 2021