Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements

Published

March 10, 2014

Author(s)

John B. Schlager, Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford

Abstract

Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperature, and nanowire morphology. While many nanowires had their best efficiencies at base temperature (T ∼ 4 K), some nanowires, given sufficient excitation intensities, had best efficiencies at elevated temperatures (T ∼ 100 K). Room-temperature internal quantum efficiency (IQE) of PL was as high as 33 {plus or minus} 5%. These steady-state results corroborate with time-resolved PL measurements reported earlier, and both methods can aid in optimizing the growth and processing of nanowires for future applications in nanoscale optoelectronics.

Citation

Physica Status Solidi

Volume

11

Issue

3-4

Pub Type

Journals

Download Paper

https://doi.org/10.1002/pssc.201300535

Keywords

gallium nitride, internal quantum efficiency, molecular beam epitaxy, nanowire, photoluminescence

Citation

Schlager, J. , Brubaker, M. , Bertness, K. and Sanford, N. (2014), Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements, Physica Status Solidi, [online], https://doi.org/10.1002/pssc.201300535 (Accessed October 18, 2025)