Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements

Published

Author(s)

John B. Schlager, Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford

Abstract

Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperature, and nanowire morphology. While many nanowires had their best efficiencies at base temperature (T ∼ 4 K), some nanowires, given sufficient excitation intensities, had best efficiencies at elevated temperatures (T ∼ 100 K). Room-temperature internal quantum efficiency (IQE) of PL was as high as 33 {plus or minus} 5%. These steady-state results corroborate with time-resolved PL measurements reported earlier, and both methods can aid in optimizing the growth and processing of nanowires for future applications in nanoscale optoelectronics.
Citation
Physica Status Solidi
Volume
11
Issue
3-4

Keywords

gallium nitride, internal quantum efficiency, molecular beam epitaxy, nanowire, photoluminescence

Citation

Schlager, J. , Brubaker, M. , Bertness, K. and Sanford, N. (2014), Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements, Physica Status Solidi, [online], https://doi.org/10.1002/pssc.201300535 (Accessed June 10, 2023)
Created March 10, 2014, Updated November 10, 2018