Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

Published

April 1, 2014

Author(s)

Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Norman A. Sanford

Abstract

Contact resistivity ρ_c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ_c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R₂₃ and four-point collinear resistances R_23collinear were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R₂₃−R_23collinear is equal to the total contact resistance R_c, the distributed-current-flow contact model shows that R₂₃−R_23collinearc when ρ_c is sufficiently small. Indeed, the measured R₂₃−R_23collinear was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρc from these data. However, it was possible to calculate an upper bound on ρc for each device based on the largest possible value of R₂₃−R23collinear. In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρc with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ_c ranged from 4.2 × 10⁻⁶ to 7.6 × 10⁻⁶ {Ω} cm², indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW fou

Citation

Semiconductor Science and Technology

Volume

29

Issue

5

Pub Type

Journals

Download Paper

https://doi.org/10.1088/0268-1242/29/5/054005

Citation

Blanchard, P. , Bertness, K. , Harvey, T. and Sanford, N. (2014), Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires, Semiconductor Science and Technology, [online], https://doi.org/10.1088/0268-1242/29/5/054005 (Accessed April 24, 2024)