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Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 ON GAAS (100) Fabricated by Molecular Beam Epitaxy

Published

Author(s)

A. J. Nelson, M Bode, G Borner, K Sinha, John M. Moreland
Proceedings Title
Proc., Mater. Res. Soc. Symp.
Conference Dates
April 4-8, 1994
Conference Location
San Francisco, CA, Austria

Citation

Nelson, A. , Bode, M. , Borner, G. , Sinha, K. and Moreland, J. (1994), Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn<sub>3</sub>Se<sub>5</sub> ON GAAS (100) Fabricated by Molecular Beam Epitaxy, Proc., Mater. Res. Soc. Symp. , San Francisco, CA, Austria (Accessed June 18, 2024)

Issues

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Created December 31, 1993, Updated October 12, 2021