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PUBLICATIONS

Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors

Published

Author(s)

X Gao, M. S. Unlu, H. Morkoc, David L. Blackburn
Citation
IEEE Transactions on Electron Devices
Volume
38
Issue
2
Pub Type
Journals

Citation

Gao, X. , Unlu, M. , Morkoc, H. and Blackburn, D. (1991), Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices (Accessed November 7, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created January 31, 1991, Updated October 12, 2021
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