Gao, X.
, Unlu, M.
, Morkoc, H.
and Blackburn, D.
(1991),
Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices
(Accessed April 18, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors
Published
Author(s)
X Gao, M. S. Unlu, H. Morkoc,
Citation
IEEE Transactions on Electron Devices
Volume
38
Issue
2
Pub Type
Journals
Citation
Created January 31, 1991, Updated October 12, 2021