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Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors

Published

Author(s)

X Gao, M. S. Unlu, H. Morkoc, David L. Blackburn
Citation
IEEE Transactions on Electron Devices
Volume
38
Issue
2

Citation

Gao, X. , Unlu, M. , Morkoc, H. and Blackburn, D. (1991), Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices (Accessed June 14, 2024)

Issues

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Created January 31, 1991, Updated October 12, 2021