Gao, X.
, Unlu, M.
, Morkoc, H.
and Blackburn, D.
(1991),
Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices
(Accessed October 8, 2024)
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Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs Power Heterojunction Bipolar Transistors
Published
Author(s)
X Gao, M. S. Unlu, H. Morkoc,
Citation
IEEE Transactions on Electron Devices
Volume
38
Issue
2
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 31, 1991, Updated October 12, 2021