Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electron-Hole Correlations in Semiconductor Quantum Dots With Tight-Binding Wave Functions

Published

Author(s)

S Lee, P. Jonsson, J W. Wilkins, Garnett W. Bryant, G Klimeck

Abstract

The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tigh-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe, as examples of typical III-V and II-Vi direct-gap materials. The electron-hole Coulomb interaction is largely insensitive to both the real-space description of the atomic basis orbitals and different ways of optimizing the tight-binding parameters. The calculated excitonic gaps are in good agreement with recent photoluminescence data for Si and CdSe but agree less well for InAs. Further, the effective range of the electron-hole exchange interaction is investigated in detail.
Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
63
Issue
No. 19

Keywords

correlation, electronic structure, exchange, nanocrystal, quantum dot, semiconductor tight-binding

Citation

Lee, S. , Jonsson, P. , Wilkins, J. , Bryant, G. and Klimeck, G. (2001), Electron-Hole Correlations in Semiconductor Quantum Dots With Tight-Binding Wave Functions, Physical Review B (Condensed Matter and Materials Physics) (Accessed December 6, 2023)
Created April 30, 2001, Updated October 12, 2021