Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces

Published

Author(s)

Hui Zhou, Joseph Fu, S Gonda, Richard M. Silver

Abstract

In order to meet leading edge and future measurement and calibration needs, NIST has been pursuing the development of atom-based dimensional standards and measurement methods. There are a few new, key concepts underlying this effort, which are intended to enable the measurement of feature width or spacing with nanometer or atomic resolution and accuracy. I addition to the critical measurement elements, it is essential to enable fabrication methods for the manufacture of calibration test structures or to precisely mark a measurement region.
Proceedings Title
Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors
Volume
4608
Conference Dates
September 5, 2001
Conference Location
Gaithersburg, MD
Conference Title
Electronics Sciences

Keywords

atom-based standards, hydrogen termination, nanomanufacturing, nanometrology, nanotechnology, SI 111, STM

Citation

Zhou, H. , Fu, J. , Gonda, S. and Silver, R. (2002), Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces, Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors, Gaithersburg, MD (Accessed April 17, 2024)
Created January 1, 2002, Updated February 19, 2017