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PUBLICATIONS

Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces

Published

Author(s)

Hui Zhou, Joseph Fu, S Gonda, Richard M. Silver

Abstract

In order to meet leading edge and future measurement and calibration needs, NIST has been pursuing the development of atom-based dimensional standards and measurement methods. There are a few new, key concepts underlying this effort, which are intended to enable the measurement of feature width or spacing with nanometer or atomic resolution and accuracy. I addition to the critical measurement elements, it is essential to enable fabrication methods for the manufacture of calibration test structures or to precisely mark a measurement region.
Proceedings Title
Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors
Volume
4608
Conference Dates
September 5, 2001
Conference Location
Gaithersburg, MD
Conference Title
Electronics Sciences
Pub Type
Conferences

Keywords

atom-based standards, hydrogen termination, nanomanufacturing, nanometrology, nanotechnology, SI 111, STM
Manufacturing and Metrology

Citation

Zhou, H. , Fu, J. , Gonda, S. and Silver, R. (2002), Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces, Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors, Gaithersburg, MD (Accessed January 20, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2002, Updated February 19, 2017