Effect of Initial Resist Thickness on Residual Layer Thickness of Nanoimprinted Structures
Hae-Jeong Lee, Hyun Wook Ro, Christopher L. Soles, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, Daniel R. Hines
Accurate quantification and control of the residual layer thickness is a critical challenge to achieving sub-50 nm patterning with nanoimprint lithography. While characterization to within a few nanometers is essential, there is currently a lack of metrologies that are capability quantifying the residual layer thickness with such precision. Here we illustrate that specular X-ray reflectivity can be used to not only quantify the thickness of the residual layer with sub-nm resolution, but also extract the pattern height, the line-to-space ratio, and perceive relative line width variations as a function of the pattern height all with a nm dimensional accuracy. This is illustrated through a series of imprints where the initial film thickness is varied.
, , H.
, Soles, C.
, Jones, R.
, Lin, E.
, Wu, W.
and Hines, D.
Effect of Initial Resist Thickness on Residual Layer Thickness of Nanoimprinted Structures, Journal of Vacuum Science and Technology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852524
(Accessed February 24, 2024)