Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effect of Initial Resist Thickness on Residual Layer Thickness of Nanoimprinted Structures



Hae-Jeong Lee, Hyun Wook Ro, Christopher L. Soles, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, Daniel R. Hines


Accurate quantification and control of the residual layer thickness is a critical challenge to achieving sub-50 nm patterning with nanoimprint lithography. While characterization to within a few nanometers is essential, there is currently a lack of metrologies that are capability quantifying the residual layer thickness with such precision. Here we illustrate that specular X-ray reflectivity can be used to not only quantify the thickness of the residual layer with sub-nm resolution, but also extract the pattern height, the line-to-space ratio, and perceive relative line width variations as a function of the pattern height all with a nm dimensional accuracy. This is illustrated through a series of imprints where the initial film thickness is varied.
Journal of Vacuum Science and Technology


metrology, nanoimprint lithography, pattern shape, residual layer, thickness, X-ray reflectivity


Lee, H. , , H. , Soles, C. , Jones, R. , Lin, E. , Wu, W. and Hines, D. (2005), Effect of Initial Resist Thickness on Residual Layer Thickness of Nanoimprinted Structures, Journal of Vacuum Science and Technology, [online], (Accessed July 18, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created December 1, 2005, Updated February 17, 2017