Kim, J.
(1987),
The effect of the gate oxide thickness on the speed of MOS integrated circuits:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.IR.87-3668
(Accessed April 19, 2024)
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The effect of the gate oxide thickness on the speed of MOS integrated circuits:
Published
Author(s)
Citation
- NBS IR 87-3668
Report Number
NBS IR 87-3668
Pub Type
NIST Pubs
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Citation
Created January 1, 1987, Updated May 19, 2023