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The effect of the gate oxide thickness on the speed of MOS integrated circuits:

Published

Author(s)

J S Kim
Citation
- NBS IR 87-3668
Report Number
NBS IR 87-3668

Citation

Kim, J. (1987), The effect of the gate oxide thickness on the speed of MOS integrated circuits:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.IR.87-3668 (Accessed June 15, 2024)

Issues

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Created January 1, 1987, Updated May 19, 2023