@misc{1174471,
  author = {J S Kim},
  title = {The effect of the gate oxide thickness on the speed of MOS integrated circuits:},
  year = {1987},
  month = {1987-01-01 05:01:00},
  publisher = {, National Institute of Standards and Technology, Gaithersburg, MD},
  doi = {https://doi.org/10.6028/NBS.IR.87-3668},
  language = {en},
}