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Edge structure of epitaxial graphene islands

Published

Author(s)

Gregory M. Rutter, N Guisinger, Jason Crain, Phillip N. First, Joseph A. Stroscio

Abstract

Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1X1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.
Citation
Physical Review B
Volume
81

Keywords

Graphene, Epitaxial Graphene, scanning tunneling microscopy

Citation

Rutter, G. , Guisinger, N. , Crain, J. , First, P. and Stroscio, J. (2010), Edge structure of epitaxial graphene islands, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903584 (Accessed May 17, 2022)
Created June 7, 2010, Updated February 19, 2017