Rutter, G.
, Guisinger, N.
, Crain, J.
, First, P.
and Stroscio, J.
(2010),
Edge structure of epitaxial graphene islands, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903584
(Accessed December 14, 2024)
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Edge structure of epitaxial graphene islands
Published
Author(s)
, , , Phillip N. First,
Abstract
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1X1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.Citation
Physical Review B
Volume
81
Pub Type
Journals
Download Paper
Keywords
Graphene, Epitaxial Graphene, scanning tunneling microscopy
Citation
Issues
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Created June 7, 2010, Updated February 19, 2017