Li, S.
(1977),
The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-33
(Accessed April 26, 2024)
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The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:
Published
Author(s)
Citation
- NBS SP 400-33
Report Number
NBS SP 400-33
Pub Type
NIST Pubs
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Citation
Created January 1, 1977, Updated May 19, 2023