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The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:

Published

Author(s)

Sheng S Li
Citation
- NBS SP 400-33
Report Number
NBS SP 400-33

Citation

Li, S. (1977), The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-33 (Accessed April 16, 2024)
Created January 1, 1977, Updated May 19, 2023