TY  - GEN
AU  - Sheng S Li
C2  - , National Institute of Standards and Technology, Gaithersburg, MD
DA  - 1977-01-01 05:01:00
DO  - https://doi.org/10.6028/NBS.SP.400-33
LA  - en
PB  - , National Institute of Standards and Technology, Gaithersburg, MD
PY  - 1977
TI  - The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:
ER  -