U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Dissolution Fundamentals of 193-nm Methacrylate Based Photoresists

Published

Author(s)

Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, W D. Hinsberg

Abstract

The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, fundamental measurements of the dissolution behavior of photoresists may provide needed insights towards improving line-edge roughness. We have studied the dissolution behavior of a model 193-nm photoresist, poly (methyladamantyl methacrylate), as a function of deprotection extent and developer strength. The kinetics of the dissolution process is followed using the quartz crystal microbalance technique, while the steady state swelling behavior is studied by reflectivity methods. These photoresist films exhibit strong swelling without dissolution over a narrow-range of deprotection levels. At larger extents of deprotection, we observe a combination of swelling with dissolution. Additionally, we find a maximum degree of film swelling with tetramethylammonium hydroxide developer concentration. If photoresist swelling and dissolution strongly affect CD control or LER, these studies provide the insight needed to better design developer materials and strategies.
Proceedings Title
Proceedings of SPIE
Volume
6153
Conference Dates
February 19-24, 2006
Conference Location
San Jose, CA, US
Conference Title
SPIE Advanced Lithography
Pub Type
Conferences

Download Paper

Local Download

Keywords

dissolution, line edge roughness, photoresist, reflectivity, swelling
Polymers

Citation

Rao, A. , Kang, S. , Vogt, B. , Prabhu, V. , Lin, E. , Wu, W. , Turnquest, K. and Hinsberg, W. (2006), Dissolution Fundamentals of 193-nm Methacrylate Based Photoresists, Proceedings of SPIE, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852551 (Accessed December 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 18, 2006, Updated October 12, 2021