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PUBLICATIONS

Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy

Published

Author(s)

Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook

Abstract

The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111} slip systems of the diamond cubic phase that are activated during indentation.
Citation
Physical Review Letters
Volume
83
Pub Type
Journals

Keywords

Raman microscopy, phase transformation, silicon, nanoindentation
Semiconductors and Materials

Citation

Gerbig, Y. , Stranick, S. and Cook, R. (2011), Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy, Physical Review Letters (Accessed October 13, 2025)

Issues

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Created May 31, 2011, Updated February 19, 2017
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