Gerbig, Y.
, Stranick, S.
and Cook, R.
(2011),
Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy, Physical Review Letters
(Accessed April 18, 2024)
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Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published
Author(s)
, ,
Abstract
The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111} slip systems of the diamond cubic phase that are activated during indentation.Citation
Physical Review Letters
Volume
83
Pub Type
Journals
Keywords
Raman microscopy, phase transformation, silicon, nanoindentation
Citation
Created May 31, 2011, Updated February 19, 2017