Gerbig, Y.
, Stranick, S.
and Cook, R.
(2011),
Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy, Physical Review Letters
(Accessed May 23, 2025)
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Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy
Published
Author(s)
, ,
Abstract
The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111} slip systems of the diamond cubic phase that are activated during indentation.Citation
Physical Review Letters
Volume
83
Pub Type
Journals
Keywords
Raman microscopy, phase transformation, silicon, nanoindentation
Citation
Issues
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Created May 31, 2011, Updated February 19, 2017