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Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy

Published

Author(s)

Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook

Abstract

The theoretically-predicted anisotropic nature of the indentation phase transformation in silicon (Si) is observed directly in experiments using hyperspectral, confocal Raman microscopy. The anisotropy is reflected in the two-dimensional distribution of the residual diamond cubic phase and high-pressure phases in indented Si(001), Si(110), and Si(111) surfaces, and is linked to the number and orientation of the {111} slip systems of the diamond cubic phase that are activated during indentation.
Citation
Physical Review Letters
Volume
83

Keywords

Raman microscopy, phase transformation, silicon, nanoindentation

Citation

Gerbig, Y. , Stranick, S. and Cook, R. (2011), Direct observation of phase transformation anisotropy in indented silicon using confocal Raman microscopy, Physical Review Letters (Accessed June 16, 2024)

Issues

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Created May 31, 2011, Updated February 19, 2017