Bersuker, G.
, Veksler, D.
, Pierce, D.
and Mason, M.
(2017),
Devices in advanced technology nodes: application-specific characterization, ECS Transactions
(Accessed April 25, 2024)
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Devices in advanced technology nodes: application-specific characterization
Published
Author(s)
gennadi bersuker, , Donald Pierce, Maribeth Mason
Abstract
Scaled advanced node devices incorporate new combinations of semiconductor materials and ultra-thin multi-layer dielectric stacks. As a consequence, inter-material interactions may unpredictably affect transistor electrical characteristics and reliability. Conventional reliability tests may miss spontaneously-occurring device recovery as well as parameters shift caused by extremely high frequency circuit operations and, therefore, may underestimate or overestimate lifetime. The proposed application-specific reliability tests account for degradation processes occurring under the conditions of interest; it can also define a safe range of use conditions that may significantly extend the device lifetime beyond the conventional reliability predictions supplied by manufacturers. We present data in support of application-specific reliability testing and discuss its use in prequalification of new technologies.Citation
ECS Transactions
Pub Type
Journals
Keywords
CMOS, advanced technology nodes, reliability
Citation
Created May 20, 2017, Updated October 12, 2021