Device-Level Jitter as a Probe of Ultrafast Traps in High-k MOSFETs
Dmitry Veksler, Jason Campbell, Kin (Charles) Cheung, J. Zhong, H. Zhu, C. Zhao
A methodology for evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on density of ultra-fast electron traps (with 500ps to 5ns characteristic capture/emission times) in a high-k/Si nMOSFET. It is shown that in spite of observed increase of timing jitter after PBTI stress, this increase may not be associated with growing density of interface traps, but is solely caused by a VT shift, which simply decreases the output signal amplitude. The results indicate that ultra-fast (presumably interface) traps may not be affected by PBTI stress.
proceedings of 2016 IEEE International Reliability Physics Symposium
April 17-21, 2016
Pasadena, CA, US
2016 IEEE International Reliability Physics Symposium
, Campbell, J.
, Cheung, K.
, Zhong, J.
, Zhu, H.
and Zhao, C.
Device-Level Jitter as a Probe of Ultrafast Traps in High-k MOSFETs, proceedings of 2016 IEEE International Reliability Physics Symposium, Pasadena, CA, US
(Accessed December 3, 2023)