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Determining Wafer Temperature From Spectral Radiance Temperature in the NIST RTP Test Bed

Published

Author(s)

D P. DeWitt

Abstract

In a companion presentation, a procedure is described for in situ calibration of a radiation thermometer (RT) with a standard uncertainty of 2.1 degrees C in the range of 750 degrees C to 950 degrees C using a silicon wafer instrumented with the new NSIT thin-film/wre thermocouple (TFWTC) technology. The in situ calibration procedure provides two vital functions for a production tool: (1) establishes confidence in the repeatability and reliability of the in-tool RT system, including the optics, interconnects and signal processor, and (2) provides in-tool traceability to the International Temperature Scale of 1990 (ITS-90) for the conditions of the calibration. Given the need for improved temperature uncertainties and the globalization trend for semiconductor device manufacturing, the industry is moving away from process temperature scales, which may provide satisfactory product in one tool or fabrication facility, in favor of traceability to the ITS-90.
Citation
Determining Wafer Temperature From Spectral Radiance Temperature in the NIST RTP Test Bed

Keywords

radiation thermometer, rapid thermal processing, RTP, silicon wafer, spectral radiance temperature, wafer temperature

Citation

DeWitt, D. (2008), Determining Wafer Temperature From Spectral Radiance Temperature in the NIST RTP Test Bed, Determining Wafer Temperature From Spectral Radiance Temperature in the NIST RTP Test Bed (Accessed July 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008