Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Critical capture distances for highly charged ions above dielectric covered metal surfaces

Published

Author(s)

Russell E. Lake, Joshua M. Pomeroy, C E. Sosolik

Abstract

We model the first stage of the electronic interaction between an ion and a metal surface covered with a thin dielectric layer. Specifically, we seek to answer two questions. (i) As an ion approaches the surface from far away, does the first electron that it captures originate from the exposed dielectric layer or the metal underneath it? (ii) What is the ion’s distance from the metal when the first electron is captured? To answer these questions, the classical potential that an electron is subject to during the interaction is calculated. The dielectric film is treated as a continuum with simple band structure. We input the parameters from recent experiments (Co with 1.5 nm thick Al2O3 film) and found that (i) the first capture proceeds from the metal, and (ii) the dielectric film extends the distance threshold for first capture compared to a metal with no film.
Citation
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms
Volume
269
Issue
11

Citation

Lake, R. , Pomeroy, J. and Sosolik, C. (2011), Critical capture distances for highly charged ions above dielectric covered metal surfaces, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms (Accessed May 23, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 1, 2011, Updated February 19, 2017