We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance, and gives unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. Furthermore, we demonstrate that the 1/f flicker noise is sensitive to structural changes in the transistor channel and can be a diagnostic tool for the quality of the devices.
Citation: Applied Physics Letters
Pub Type: Journals
Flicker Noise, Microstructure, Mobility, Organic, Thin Film Transistor