We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar trends accounting for polysilicon depletion and quantum-mechanical confinement, quantitatively, there is difference of up to 20% in the calculated accumulation capacitance for devices with ultra-thin gate dielectrics. This discrepancy leads to large inaccuracies in the values of dielectric thickness extracted from capacitance measurements and illustrates the importance of consistency during capacitance-voltage analysis and the need to fully report how such analysis is done.
Citation: IEEE Electron Device Letters
Pub Type: Journals
capacitance, effective, oxide thickness, gate dielectric, MOS devices, polysilicon depletion, inversion quantization