A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both diode types are measured using recently developed high-voltage, high-frequency device test systems. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, high-frequency double-pulse switching test system. The results indicates that the SiC JBS diodes are far superior to the Si PiN diodes, resulting in an order of magnitude less switching loss and substantially less current spike stress. Validated models are also developed for the 4.5 kV SiC JBS diode and Si PiN diode.
Proceedings Title: Proceedings of the Applied Power Electronics Conference and Exposition 2011
Conference Dates: March 6-10, 2011
Conference Location: Fort Worth, TX
Conference Title: APEC 2011 (The Applied Power Electronics Conference and Exposition)
Pub Type: Conferences
Silicon Carbide, medium-voltage, high-frequency, Junction Barrier Schottky (JBS), hybrid half-bridge module, power systems.