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Chemically Amplified Photoresists Fundamental Properties and Limits of Applicability to Sub-100 nm Lithography

Published

Author(s)

D M. Goldfarb, Eric K. Lin, Christopher Soles, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Wilson, Sushil K. Satija, Wen-Li Wu

Abstract

State-of-the-art lithographic technologies combine chemically amplified photoresists and sophisticated radiation sources to delineate patterned areas with high spatial resolution, enabling the fabrication of continually decreasing feature sizes in the devices produced by the microelectronics industry. Pattern dimensions are determined by a complex reaction-diffusion process occurring within the photoresist exposed to such radiation and subsequently by the interaction between the exposed material (latent image) and a developer solution. In a recent report, we informed that specially synthesized materials used in combination with neutron reflectivity (NR) techniques yielded the first direct determination of the resist deprotection reaction front both before and after development. The spatial extent of the reaction front was investigated over length scales relevant to lithographic resolution (0-20 nm).
Citation
Microlithography World

Keywords

nanofabrication, neutron reflectivity, photolithography, photoresist, reaction-diffusion

Citation

Goldfarb, D. , Lin, E. , Soles, C. , Trinque, B. , Burns, S. , Jones, R. , Lenhart, J. , Angelopoulos, M. , Wilson, C. , Satija, S. and Wu, W. (2021), Chemically Amplified Photoresists Fundamental Properties and Limits of Applicability to Sub-100 nm Lithography, Microlithography World (Accessed July 6, 2022)
Created October 12, 2021