Conrad, B.
, Chan, C.
, Loth, M.
, Parkin, S.
, Zhang, X.
, Anthony, J.
and Gundlach, D.
(2010),
Characterization of a Soluble Anthradithiophene Derivative, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905704
(Accessed April 19, 2024)
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Characterization of a Soluble Anthradithiophene Derivative
Published
Author(s)
, , Marsha A. Loth, Sean R. Parkin, , John E. Anthony,
Abstract
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism.Citation
Applied Physics Letters
Volume
97
Pub Type
Journals
Download Paper
Keywords
device, single crystal, organic, transistor, noise, TFT, AFM
Citation
Created October 1, 2010, Updated February 19, 2017