Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS

Published

April 1, 2003

Author(s)

R C. Hedden, Barry J. Bauer, Hae-Jeong Lee

Abstract

Small-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-k thin films. Using a vapor adsorption technique, SANS measurements are used to identify a contrast match solvent mixture containing the hydrogen- and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. In combination with information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wall) material and the pore size distribution. To illustrate the technique, a porous methylsilsesquioxane (MSQ) spin-on dielectric is characterized.

Proceedings Title

Materials Research Society Symposia Proceedings | | Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectricx--2003: 2003 Mrs Spring Meeting | Materials Research Society

Volume

766

Conference Dates

April 21-25, 2003

Conference Title

Materials Research Society Symposium Proceedings

Pub Type

Conferences

Keywords

dielectric, low-k, nanoporous thin films, neutron scattering, porosmetry, x-ray reflectivity

Citation

Hedden, R. , Bauer, B. and Lee, H. (2003), Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS, Materials Research Society Symposia Proceedings | | Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectricx--2003: 2003 Mrs Spring Meeting | Materials Research Society (Accessed October 13, 2025)