Arz, U.
, Williams, D.
, Walker, D.
, Rogers, J.
, Rudack, M.
, Treytner, D.
and Grabinski, H.
(2000),
Characterization of Asymmetric Coupled CMOS Lines, Dig., IEEE Microwave Theory Tech. Intl. Symp., Boston, MA, [online], https://doi.org/10.1109/MWSYM.2000.863258
(Accessed April 24, 2024)
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Characterization of Asymmetric Coupled CMOS Lines
Published
Author(s)
, , , J. E. Rogers, M. Rudack, D. Treytner, Hartmut Grabinski
Abstract
This paper investigates the properties of asymmetric coupled lines built in a 0.25 5m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from callibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.Proceedings Title
Dig., IEEE Microwave Theory Tech. Intl. Symp.
Volume
2
Conference Dates
June 11-16, 2000
Conference Location
Boston, MA
Pub Type
Conferences
Download Paper
Keywords
electromagnetic simulation, equivalent-circuit parameters, measurement, silicon, substrate effect transmission line
Citation
Created June 1, 2000, Updated November 10, 2018