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Calibrated Broadband Electrical Characterization of Nanowires

Published

Author(s)

Thomas Mitchell (Mitch) Wallis, Atif A. Imtiaz, Hans Nembach, Kristine A. Bertness, Norman Sanford, Paul T. Blanchard, Pavel Kabos

Abstract

A technique is presented for the broadband electrical characterization of nanowires. The technique relies on established on-wafer calibration methods as well as a direct measurement of the capacitive coupling that is in parallel with the nanowire admittance. GaN nanowire devices are used to demonstrate the measurement technique and their response is found to depend strongly on quality of electrical contacts and the geometry of the nanowire network.
Proceedings Title
Conference on Precision Electromagnetic Measurements
Conference Dates
June 8-12, 2008
Conference Location
Broomfield, CO, USA
Conference Title
CPEM 2008

Keywords

calibration, semiconductor nanowires, microwaves, radio frequency nanoelectronics, on-wafer measurements

Citation

Wallis, T. , Imtiaz, A. , Nembach, H. , Bertness, K. , Sanford, N. , Blanchard, P. and Kabos, P. (2008), Calibrated Broadband Electrical Characterization of Nanowires, Conference on Precision Electromagnetic Measurements, Broomfield, CO, USA (Accessed May 21, 2024)

Issues

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Created June 7, 2008, Updated October 12, 2021