Broadband Impedance Parameters of Asymmetric Coupled CMOS Interconnects: New Closed-Form Expressions and Comparison with Measurements

Published

May 11, 2003

Author(s)

Uwe Arz, Dylan F. Williams, Dave K. Walker, Luoh A, Hartmut Grabinski, Andreas Weisshaary

Abstract

New broadband closed-form expressions for the frequencydependent impedance parameters of asymmetric coupled coplanar interconnects on a conductive silicon substrate are presented. The closed-form expressions are based on a complex image approach that accounts for eddy-current loss in the substrate and incorporates the effect of substrate contacts in the ground lines. The closed-form expressions for asymmetric coupled interconnects fabricated in a CMOS process generally agree well with measurements. To further investigate small differences between the model and measurement results, we also examined the importance of skin- and proximity-effects in the closely spaced conductors.

Proceedings Title

7th IEEE Workshop on Signal Propagation on Interconnects

Conference Dates

May 1, 2003

Conference Location

Siena

Pub Type

Conferences

Download Paper

Local Download

Citation

Arz, U. , Williams, D. , Walker, D. , A, L. , Grabinski, H. and Weisshaary, A. (2003), Broadband Impedance Parameters of Asymmetric Coupled CMOS Interconnects: New Closed-Form Expressions and Comparison with Measurements, 7th IEEE Workshop on Signal Propagation on Interconnects, Siena, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=920451 (Accessed September 18, 2024)