Woicik, J.
(1999),
Bond Lengths in Strained Semiconductor Alloys, Journal of Synchrotron Radiation
(Accessed September 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Bond Lengths in Strained Semiconductor Alloys
Published
Author(s)
Abstract
The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on GaAs(001) and InP(001) substrates have been determined by high-resolution extended x-ray absorption fine-structure and diffraction anomalous fine-structure measurements. Comparisons with random-cluster, valence-force field calculations demonstrate that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.Citation
Journal of Synchrotron Radiation
Volume
6
Issue
Part 3
Pub Type
Journals
Keywords
DAFS, diffraction anamolous-fine structure, EXAFS, extended x-ray absorption-fine structure
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 1, 1999, Updated February 19, 2017