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The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on GaAs(001) and InP(001) substrates have been determined by high-resolution extended x-ray absorption fine-structure and diffraction anomalous fine-structure measurements. Comparisons with random-cluster, valence-force field calculations demonstrate that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.