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Bond Lengths in Strained Semiconductor Alloys

Published

Author(s)

Joseph C. Woicik

Abstract

The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on GaAs(001) and InP(001) substrates have been determined by high-resolution extended x-ray absorption fine-structure and diffraction anomalous fine-structure measurements. Comparisons with random-cluster, valence-force field calculations demonstrate that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying.
Citation
Journal of Synchrotron Radiation
Volume
6
Issue
Part 3

Keywords

DAFS, diffraction anamolous-fine structure, EXAFS, extended x-ray absorption-fine structure

Citation

Woicik, J. (1999), Bond Lengths in Strained Semiconductor Alloys, Journal of Synchrotron Radiation (Accessed May 30, 2024)

Issues

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Created May 1, 1999, Updated February 19, 2017