Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping

Published

August 28, 2025

Author(s)

Maicol Ochoa Daza, Keyi Liu, Garnett Bryant

Abstract

Donor-based quantum devices in silicon are attractive platforms for universal quantum computing and analog quantum simulations. The nearly-atomic precision in dopant placement promises great control over the quantum properties of these devices. We present atomistic calculations and a detailed analysis of many-electron states in a single phosphorus atom and selected phosphorus dimers in silicon. Our self-consistent method involves atomistic calculations of the electron energies utilizing representative tight-binding Hamiltonians, computations of Coulomb and exchange integrals without any reference to an atomic orbital set, and solutions to the associated Hartree-Fock equations. First, we assess the quality of our tight-binding Hartree-Fock protocol against Configuration-Interaction calculations for two electrons in a single phosphorus atom, finding that our formalism provides an accurate estimation of the electron-electron repulsion energy requiring smaller computational boxes and single-electron wavefunctions. Then, we compute charging and binding energies in phosphorus dimers, observing their variation as a function of impurity-impurity separation. Our calculations predict an antiferromagnetic ground state for the two-electron system and a weakly bound three-electron state in the range of separations considered. We rationalize these results in terms of the single-electron energies, charging energies, and the wavefunction reshaping.

Citation

Physical Review B

Volume

112

Issue

7

Pub Type

Journals

Download Paper

https://doi.org/10.1103/14lg-249q

Local Download

Citation

Ochoa Daza, M. , Liu, K. and Bryant, G. (2025), Atomistic tight-binding Hartree-Fock calculations of multielectron configurations in P-doped silicon devices: Wavefunction reshaping, Physical Review B, [online], https://doi.org/10.1103/14lg-249q, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=959472 (Accessed October 13, 2025)