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Atomic Level Surface Metrology



Theodore V. Vorburger, Ronald G. Dixson, Jun-Feng Song, Thomas Brian Renegar, Joseph Fu, Ndubuisi George Orji, V W. Tsai, E. C. Williams, H Edwards, D Cook, P West, R Nyffenegger


MotivationSemiconductor wafers and many types of optical elementsrequire ultra-smooth surfaces in order to functionas specifiedExamples:Laser gyro mirrors with rms roughness 0.1 nmSilicon gate oxides with thickness 3 nm,rms roughness must be significantly smaller to minimizevariation in the gate oxide
Conference Dates
November 26-27, 2001
Conference Location
Unknown, 1, USA
Conference Title
Defense Manufacturing Conference


Calibration Methods, Silicon Atomic Steps, Surface Finish Metrology


Vorburger, T. , Dixson, R. , Song, J. , Renegar, T. , Fu, J. , Orji, N. , Tsai, V. , Williams, E. , Edwards, H. , Cook, D. , West, P. and Nyffenegger, R. (2001), Atomic Level Surface Metrology, Defense Manufacturing Conference, Unknown, 1, USA (Accessed April 14, 2024)
Created December 31, 2000, Updated October 12, 2021