Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Assessing MOS Gate Oxide Reliability on Wafer Level with Ramped/Constant Voltage and Current Stress

Published

Author(s)

A. Martin, John S. Suehle, P Chaparala, P. O'Sullivan, A. Mathewson, C. Messick
Proceedings Title
1995 IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 22-25, 1995
Conference Location
Lake Tahoe, CA, USA

Citation

Martin, A. , Suehle, J. , Chaparala, P. , O'Sullivan, P. , Mathewson, A. and Messick, C. (1996), Assessing MOS Gate Oxide Reliability on Wafer Level with Ramped/Constant Voltage and Current Stress, 1995 IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA (Accessed December 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1996, Updated October 12, 2021