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Assessing MOS Gate Oxide Reliability on Wafer Level with Ramped/Constant Voltage and Current Stress

Published

Author(s)

A. Martin, John S. Suehle, P Chaparala, P. O'Sullivan, A. Mathewson, C. Messick
Proceedings Title
1995 IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 22-25, 1995
Conference Location
Lake Tahoe, CA, USA

Citation

Martin, A. , Suehle, J. , Chaparala, P. , O'Sullivan, P. , Mathewson, A. and Messick, C. (1996), Assessing MOS Gate Oxide Reliability on Wafer Level with Ramped/Constant Voltage and Current Stress, 1995 IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA (Accessed May 29, 2024)

Issues

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Created December 30, 1996, Updated October 12, 2021