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Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)

Published

Author(s)

B Liu, C L. Berrie, T Kitajima, S R. Leone
Citation
Journal of Crystal Growth
Volume
241

Citation

Liu, B. , Berrie, C. , Kitajima, T. and Leone, S. (2002), Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001), Journal of Crystal Growth (Accessed February 24, 2024)
Created December 31, 2001, Updated October 12, 2021