Liu, B.
, Berrie, C.
, Kitajima, T.
and Leone, S.
(2002),
Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001), Journal of Crystal Growth
(Accessed May 11, 2025)
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Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)
Published
Author(s)
B Liu, C L. Berrie, T Kitajima,
Citation
Journal of Crystal Growth
Volume
241
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 2001, Updated October 12, 2021