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PUBLICATIONS

Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)

Published

Author(s)

B Liu, C L. Berrie, T Kitajima, S R. Leone
Citation
Journal of Crystal Growth
Volume
241
Pub Type
Journals

Citation

Liu, B. , Berrie, C. , Kitajima, T. and Leone, S. (2002), Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001), Journal of Crystal Growth (Accessed October 16, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created December 31, 2001, Updated October 12, 2021
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