Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties

Published

September 1, 2005

Author(s)

Safak Sayan, Mark Croft, Nhan Van Nguyen, Tom Emge, Evgeni Gusev, Hyunjung G. Kim, James R. Ehrstein, Paul McIntyre, Eric Garfunkel

Abstract

As medium-high permittivity dielectrics approach use in MOSFET production, an atomic level understanding of their permittivity and the capacitance of structures made from them are being rigorously examined. In this note, the issue of crystal structure in ultrathin films of ZrO2 is addressed and how phase can affect permittivity as well as band gap and alignment. Crystal structure has a considerable effect on dielectric properties, band gap, and band alignment. The phase of the dielectric can change depending on its physical thickness and annealing conditions

Citation

Applied Physics Letters

Volume

15

Pub Type

Journals

Keywords

Dielectrics, zirconia, crystal structure, x-ray absorption spoectroscopy, spectroscopic ellipsometry

Citation

Sayan, S. , Croft, M. , Nguyen, N. , Emge, T. , Gusev, E. , Kim, H. , Ehrstein, J. , McIntyre, P. and Garfunkel, E. (2005), Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties, Applied Physics Letters (Accessed October 26, 2025)