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Algorithms for Calculating Single-Atom Step Heights
Published
Author(s)
Joseph Fu, V W. Tsai, R Koning, Ronald G. Dixson, Theodore V. Vorburger
Abstract
Recently, measuring Si(111) single atomic steps prompted us to investigate the measuring technique. The section technique is the most popular method for measuring the height. By measuring a simulated Si(111) atomic step, we have found it could have an error as high as 2% due to the misalignment of the measuring axis and sample axis of 0.1 degrees.
Citation
Nanotechnology
Volume
10
Issue
No. 4
Pub Type
Journals
Keywords
atomic force microscope, histogram, orthogonal transformation, Si(111) single steps, stylus
Fu, J.
, Tsai, V.
, Koning, R.
, Dixson, R.
and Vorburger, T.
(1999),
Algorithms for Calculating Single-Atom Step Heights, Nanotechnology
(Accessed October 10, 2025)