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Algorithms for Calculating Single-Atom Step Heights

Published

Author(s)

Joseph Fu, V W. Tsai, R Koning, Ronald G. Dixson, Theodore V. Vorburger

Abstract

Recently, measuring Si(111) single atomic steps prompted us to investigate the measuring technique. The section technique is the most popular method for measuring the height. By measuring a simulated Si(111) atomic step, we have found it could have an error as high as 2% due to the misalignment of the measuring axis and sample axis of 0.1 degrees.
Citation
Nanotechnology
Volume
10
Issue
No. 4

Keywords

atomic force microscope, histogram, orthogonal transformation, Si(111) single steps, stylus

Citation

Fu, J. , Tsai, V. , Koning, R. , Dixson, R. and Vorburger, T. (1999), Algorithms for Calculating Single-Atom Step Heights, Nanotechnology (Accessed June 21, 2024)

Issues

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Created January 1, 1999, Updated February 19, 2017