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Stephen Moxim (Fed)
Physicist
Stephen Moxim is a physicist in the Advanced Electronics Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). He was raised in Windber, PA, USA. He attended The Pennsylvania State University and received a bachelor’s degree in Engineering Science and Mechanics in 2017, and a PhD in Engineering Science in 2022. Stephen’s current research focus is on large-scale reliability measurements in SiC transistor gate oxides. He is also involved in efforts to develop solid state magnetometers, as well as defect metrology methods for packaged semiconductor devices.
Selected Publications
- Moxim, S. J., Harmon, N. J., Myers, K. J., Ashton, J. P., Frantz, E. B., Flatté, M. E., ... & Ryan, J. T. (2024). Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications. Journal of Applied Physics, 135(15).
- Blakley, S. M., Mai, T. T., Moxim, S. J., Ryan, J. T., Biacchi, A. J., Walker, A. R. H., & McMichael, R. D. (2024). Spectroscopy of photoionization from the 1E singlet state in nitrogen-vacancy centers in diamond. Physical Review B, 110(13), 134109.
- Moxim, S. J., Sharov, F. V., Hughart, D. R., Haase, G. S., McKay, C. G., & Lenahan, P. M. (2022). Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2 transistors. Applied Physics Letters, 120(6), 063502.