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Shinichiro Muramoto (Fed)

Publications

Demonstration of Immunity to 400 ◦C Forming Gas Annealing in Oxide Semiconductor Transistor via PostMetallization Annealing

Author(s)
Yu-Hsin Kuo, Dylan J. Matthews, Shinichiro N. Muramoto, TaeYoung Song, Chengyang Zhang, Xianduo Zhao, Md S. Rahman, Sanghyun Kang, Andres S. Aguirre, Seung M. Lee, Daewon Ha, Sourav Dutta, Theodore Moise, Jayakanth Ravichandran, Shimeng Yu, Alexander Grutter, Suman Datta, Tania Roy, Asif I. Khan
Hydrogen-based annealing processes like forming gas annealing (FGA), widely used in back-end-ofline (BEOL) fabrication, can severely impact the threshold
View more Publications
Created July 17, 2018, Updated December 8, 2022
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