Matthew Brubaker

Publications

Semiconductor thermal and electrical properties decoupled by localized phonon resonances

May 10, 2023

Author(s)

Bryan Spann, Joel Weber, Matthew Brubaker, Todd E. Harvey, LINA YANG, Hossein Honarvar, Chia-Nien Tsai, Andrew Treglia, MINHYEA LEE, MAHMOUD HUSSEIN, Kris A. Bertness

Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with

Direct Growth and Fabrication of Tungsten Coated GaN Nanowire Probes on Cantilevers for Scanning Probe Microscopy

May 13, 2022

Author(s)

Kristen Genter, Matthew Brubaker, Samuel Berweger, Jonas Gertsch, Kris A. Bertness, Pavel Kabos, Victor Bright

Gallium nitride nanowires (NWs) grown on silicon-on-insulator wafers by means of selective area epitaxy are directly integrated into scanning probe cantilever

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

February 18, 2021

Author(s)

Luis Miaja Avila, Benjamin Caplins, Ann Debay, Paul T. Blanchard, Matthew D. Brubaker, Albert Davydov, David R. Diercks, Brian Gorman, Ashwin Rishinaramangalam, Daniel Feezell, Kristine A. Bertness, Norman Sanford

Crystallographic Polarity Measurements in Two-Terminal GaN Nanowire Devices by Lateral Piezoresponse Force Microscopy

July 23, 2020

Author(s)

Matthew Brubaker, Alexana Roshko, Samuel Berweger, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kris A. Bertness

Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN

Isomorphic contact resonance force microscopy and piezoresponse force microscopy of an AlN thin film: demonstration of a new contact resonance technique

June 15, 2020

Author(s)

Lawrence H. Robins, Matthew D. Brubaker, Jason Killgore, Ryan Tung

We present a new contact resonance force microscopy (CRFM) imaging technique, isomorphic contact resonance (iso-CR), that acquires data at a constant contact

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Patents (2018-Present)

Core-Shell Nanofin Vertical Switch and High-Voltage Switching

NIST Inventors

Kris A. Bertness and Matthew Brubaker

A core-shell nanofin vertical switch performs high-voltage switching and includes: an n-type GaN nanofin core including: an n-type drift layer; an n-type channel; and an n-type source; a p-type nanofin shell surrounding the n-type GaN nanofin core at an interface surface of the n-type GaN nanofin

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Matthew Brubaker (Fed)

Publications

Patents (2018-Present)