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Matthew Brubaker

Publications

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

Author(s)
Kristine A. Bertness, Wenjun Li, Matthew D. Brubaker, Bryan T. Spann, Patrick Fay
Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

Author(s)
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron

Near-field control and imaging of free charge carrier variations in GaN nanowires

Author(s)
Samuel Berweger, Paul T. Blanchard, Matthew D. Brubaker, Kevin J. Coakley, Norman A. Sanford, Thomas M. Wallis, Kristine A. Bertness, Pavel Kabos
Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic
Created June 18, 2019