Matthew Brubaker

Publications

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

December 21, 2017

Author(s):

Kristine A. Bertness, Wenjun Li, Matthew D. Brubaker, Bryan T. Spann, Patrick Fay

Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of...

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 08, 2016

Author(s):

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss

A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron...

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

March 02, 2016

Author(s):

Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine A. Bertness

The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were...

Near-field control and imaging of free charge carrier variations in GaN nanowires

February 15, 2016

Author(s):

Samuel Berweger, Paul T. Blanchard, Matthew D. Brubaker, Kevin J. Coakley, Norman A. Sanford, Thomas M. Wallis, Kristine A. Bertness, Pavel Kabos

Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated...

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

December 18, 2015

Author(s):

Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford, Kristine A. Bertness

We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers...