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Mark D. Vaudin

Research Interests

  • Electron backscatter diffraction (EBSD) applied to microstructural, strain and texture measurements
  • Strain and stress determination using cross-correlation based EBSD technique for the development of nanoscale strain standards
  • High resolution X-ray diffraction using lattice comparator with 10-8 accuracy for lattice spacing and strain standards development
  • X-ray diffraction applied to texture and stress measurements using area and linear detector-based diffractometers
  • Scanning electron microscopy applied to broad spectrum of materials

Vaudin Fig 1 and 2

Figures 1(left): Stress profiles measured across 350 mN wedge indentation in Si using EBSD and Confocal Raman Microscopy with different wavelength laser excitation; Figure 2(right): Lattice comparator with two x-ray sources, interferometer-controlled crystal and four test crystals

Postdoctoral Research Opportunities

Nanoscale Stress Mapping Using Confocal Raman Spectroscopy and Electron Back Scattered Diffraction

Strain engineering at the nanoscale in the microelectronics industry requires the ability to make strain and stress measurements with spatial resolution at the 50 nm level and strain resolution at the 10-4 level. Electron Back Scattered Diffraction and Confocal Raman Spectroscopy are two complementary techniques that can achieve the necessary resolutions. Significant progress has been made with both techniques but much work in technique and standards development remains to be done.

Crystallographic Texture Measurements in Thin Film and Bulk Materials

Study uniaxial and triaxial texture with diffraction techniques. Use electron backscatter diffraction and x-ray diffraction with area and linear detectors to investigate texture in thin films (typically uniaxial) and bulk materials at different length scales.
 

Publications

Strain Measurement of 3D Structured Nanodevices by EBSD

Author(s)
William A. Osborn, Lawrence H. Friedman, Mark D. Vaudin
We present a new methodology to accurately measure strain magnitudes from 3D nanodevices using Electron Backscatter Diffraction (EBSD). Because the dimensions

The Lattice Spacing Variability of Intrinsic Float-Zone Silicon

Author(s)
Ernest G. Kessler Jr., Csilla I. Szabo-Foster, James P. Cline, Albert Henins, Lawrence T. Hudson, Marcus H. Mendenhall, Mark D. Vaudin
Precision lattice spacing comparison measurements at the National Institute of Standards and Technology (NIST) provide traceability of x-ray wavelength and
Created July 30, 2019, Updated November 14, 2019