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Mark D. Vaudin

Research Interests

  • Electron backscatter diffraction (EBSD) applied to microstructural, strain and texture measurements
  • Strain and stress determination using cross-correlation based EBSD technique for the development of nanoscale strain standards
  • High resolution X-ray diffraction using lattice comparator with 10-8 accuracy for lattice spacing and strain standards development
  • X-ray diffraction applied to texture and stress measurements using area and linear detector-based diffractometers
  • Scanning electron microscopy applied to broad spectrum of materials

 

Vaudin Fig 1 and 2

Figures 1(left): Stress profiles measured across 350 mN wedge indentation in Si using EBSD and Confocal Raman Microscopy with different wavelength laser excitation; Figure 2(right): Lattice comparator with two x-ray sources, interferometer-controlled crystal and four test crystals

 

Publications

Microscale Mapping of Structure and Stress in Barium Titanate

Author(s)
Jane A. Howell, Mark D. Vaudin, Lawrence H. Friedman, Robert F. Cook
Cross-correlation of electron backscatter diffraction (EBSD) patterns was used to generate rotation, strain, and stress maps of single-crystal tetragonal barium

Strain Measurement of 3D Structured Nanodevices by EBSD

Author(s)
William A. Osborn, Lawrence H. Friedman, Mark D. Vaudin
We present a new methodology to accurately measure strain magnitudes from 3D nanodevices using Electron Backscatter Diffraction (EBSD). Because the dimensions

The Lattice Spacing Variability of Intrinsic Float-Zone Silicon

Author(s)
Ernest G. Kessler Jr., Csilla I. Szabo-Foster, James P. Cline, Albert Henins, Lawrence T. Hudson, Marcus H. Mendenhall, Mark D. Vaudin
Precision lattice spacing comparison measurements at the National Institute of Standards and Technology (NIST) provide traceability of x-ray wavelength and
Created July 30, 2019, Updated September 25, 2020