Kris A. Bertness

Publications

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

December 21, 2017

Author(s):

Kristine A. Bertness, Wenjun Li, Matthew D. Brubaker, Bryan T. Spann, Patrick Fay

Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of...

Dimensional Measurement of Nanostructures with Scanning Electron Microscopy

September 20, 2017

Author(s):

Kristine A. Bertness

Scanning electron microscopy (SEM) is widely used for the measurement of dimensions of nanostructures. This document describes the calibration of SEM...

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 08, 2016

Author(s):

Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss

A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron...

Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy

September 30, 2016

Author(s):

Lawrence H. Robins, Elizabeth Horneber, Norman A. Sanford, Kristine A. Bertness, John B. Schlager

The carrier concentration in ensembles of n-type GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy was determined by curve-fitting analysis...

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

March 02, 2016

Author(s):

Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine A. Bertness

The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were...