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Igor Levin (Fed)

Leader, Materials Structure and Data Group

Research Interests

  • Determination of local structure in inorganic materials using combined input from x-ray/neutron diffraction, electron microscopy imaging, and spectroscopic techniques;
  • Determination of crystal structures, phase transitions, and structure-property relations in bulk and thin film electronic ceramics;
  • Characterization of nanoscale structural and compositional heterogeneities in inorganic materials using high-resolution transmission electron mcroscopy and electron energy loss spectroscopy

Postdoctoral Research opportunities

Emerging electronic oxides (e.g. dielectrics, ferroelectrics, ionic conductors) frequently exhibit local atomic arrangements that are significantly different from those described by the average atomic positions as inferred from traditional crystallographic methods. The research includes experimental measurements on industrially-pertinent materials using a range of advanced techniques (transmission electron microscopy, x-ray and neutron diffraction, x-ray absorption fine structure, and Raman spectroscopy) and development of data analysis approaches and computer software for simultaneous structural refinements using multiple types of data

Accurate knowledge of atomic arrangements and internal substructure in nanomaterials is a key to understanding their properties. The project seeks to address this measurement problem by integrating theoretical analyses and several critical experimental techniques including total x ray and neutron scattering for extracting atomic pair distribution functions, small-angle scattering, and extended absorption fine structure measurements. NIST's Materials Measurement Science Division has access to state-of-the-art synchrotron and neutron radiation facilities for these measurements.



Awards and Honors

  • Bronze Medal, U.S. Department of Commerce, 2013
  • The Spriggs Phase Equilibria Award, American Ceramic Society, 2006
  • Minerva Fellowship, Max-Planck Institut, 1995


The Nanostructure Problem

Simon J. Billinge, Igor Levin
The powerful methods we have for solving the atomic structure of bulk crystals fail for nanostructured materials and there are currently no broadly applicable

Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications

Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO2/ Si and ZrO2/SiO2/Si were investigated and the interfacial layer of
Created August 20, 2019, Updated December 8, 2022